Publications

Arnab Hazari

Electrical Engineer · Data Scientist · Writer

Patent

  1. 1.Arnab Hazari, Pallab Bhattacharya, United States Patent No. US 10,305,250 B2.

Publications in Popular Media

  1. 1.Pallab Bhattacharya, Arnab Hazari, “Constructing interconnects with nitride nanowire arrays”, Compound Semiconductor, 24 (4) 2018.
  2. 2.Arnab Hazari, “The future of electronics is light”, The Conversation, November 2016. Featured on The World Economic Forum

Book Chapter Publications

  1. 1.Pallab Bhattacharya, Thomas Frost, Shafat Jahangir, Saniya Deshpande, and Arnab Hazari, “III-Nitride Quantum Dots for Optoelectronic Devices”, Molecular Beam Epitaxy: Materials and Device Applications, 2019.
  2. 2.Pallab Bhattacharya, Arnab Hazari, Shafat Jahangir, Wei Guo, and Thomas Frost, “III-nitride electrically pumped visible and near-infrared nanowire lasers on (001) silicon”, Semiconductors and Semimetals, 2016.

Journal Publications

  1. 1.Arnab Hazari, Alexander Soibel, Sarath D. Gunapala, and Pallab Bhattacharya, “Infrared Absorption at 300 K in InGaN/GaN Disk-in-Nanowire Arrays Grown on (001) Silicon,” IEEE Photonics Technology Letters, vol. 29, no. 20, pp. 1751–1754, Oct. 2017.
  2. 2.Arnab Hazari, Fu Chen Hsiao, Lifan Yan, Junseok Heo, Joanna Mirecki-Millunchick, John M. Dallesasse, and Pallab Bhattacharya, “1.3 μm Optical Interconnect on Silicon: A Monolithic III-Nitride Nanowire Photonic Integrated Circuit,” IEEE Journal of Quantum Electronics, vol. 53, no. 4, Aug. 2017.
  3. 3.Arnab Hazari, Md. Zunaid Baten, and Pallab Bhattacharya, “A InN/InGaN/GaN Nanowire Array Guided Wave Photodiode on Silicon,” Applied Physics Letters, 109 (191102), 191102-1–191102-4, 2016.
  4. 4.Arnab Hazari, Anthony Aiello, Tien-Khee Ng, Boon S. Ooi, and Pallab Bhattacharya, “III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001) silicon,” Applied Physics Letters, 107 (191107), 191107-1–191107-5, 2015.
  5. 5.Arnab Hazari, Aniruddha Bhattacharya, Thomas Frost, Songrui Zhao, Md Zunaid Baten, Zetian Mi, Pallab Bhattacharya, “Optical constants of InxGa1-xN (0≤x≤0.73) in the visible and near-infrared wavelength regimes,” Optics Letters, 40 (14), 3304–3307, 2015.
  6. 6.Fu-Chen Hsiao, Arnab Hazari, Yia-Chung Chang, Pallab Bhattacharya, and John M. Dallesasse, “Modeling photocurrent spectra of high-indium-content InGaN disk-in-wire photodiode on silicon substrate,” Physica E: Low-dimensional Systems and Nanostructures, 144, 115371, 2022.
  7. 7.Alexander S. Chang, J. C. Walrath, Thomas Frost, C. Greenhill, J. Occena, Arnab Hazari, Pallab Bhattacharya, and Rachel S. Goldman, “Formation and properties of InGaN QDs: Influence of substrates,” Applied Physics Letters, 114, no. 6, 2019.
  8. 8.Dip Joti Paul, Arjuman Ara Mimi, Arnab Hazari, Pallab Bhattacharya, and Md Zunaid Baten, “Finite-difference time-domain analysis of the tunability of Anderson localization of light in self-organized GaN nanowire arrays,” Journal of Applied Physics, 125, no. 4, 2019.
  9. 9.Lifan Yan, Arnab Hazari, Pallab Bhattacharya, and Joanna M. Millunchick, “Shape Evolution of Highly Lattice-Mismatched InN/InGaN Nanowire Heterostructures,” Journal of Electronic Materials, 47, no. 2, pp. 966–972, 2018.
  10. 10.Thomas Frost, Guan-Lin Su, Arnab Hazari, John M. Dallesasse, and Pallab Bhattacharya, “Red and near-infrared III-nitride quantum dot lasers,” IEEE Journal of Selected Topics in Quantum Electronics, 23, no. 6, pp. 1–9, 2017.
  11. 11.Pallab Bhattacharya, Arnab Hazari, Shafat Jahangir, Wei Guo, and Thomas Frost, “III-nitride electrically pumped visible and near-infrared nanowire lasers on (001) silicon,” Semiconductors and Semimetals, vol. 96, pp. 385–409, Elsevier, 2017.
  12. 12.Pallab Bhattacharya and Arnab Hazari, “InGaN/GaN Dot-in-Nanowire Lasers on Silicon,” Laser Science, pp. LTu1H-2, Optica Publishing Group, 2016.
  13. 13.Thomas Frost, Arnab Hazari, Anthony Aiello, Md Zunaid Baten, Lifan Yan, Joanna Mirecki-Millunchick, and Pallab Bhattacharya, “High performance red-emitting multiple layer InGaN/GaN quantum dot lasers,” Japanese Journal of Applied Physics, 55, no. 3, 032101, 2016.
  14. 14.Saniya Deshpande, Thomas Frost, Lifan Yan, Shafat Jahangir, Arnab Hazari, Xianhe Liu, Joanna Mirecki-Millunchick, Zetian Mi, and Pallab Bhattacharya, “Formation and nature of InGaN quantum dots in GaN nanowires,” Nano Letters, 15, no. 3, pp. 1647–1653, 2015.
  15. 15.Shafat Jahangir, Thomas Frost, Arnab Hazari, Lifan Yan, Ethan Stark, Trevor LaMountain, Joanna M. Millunchick, Boon S. Ooi, and Pallab Bhattacharya, “Small signal modulation characteristics of red-emitting (λ= 610 nm) III-nitride nanowire array lasers on (001) silicon,” Applied Physics Letters, 106, no. 7, 2015.
  16. 16.Saniya Deshpande, Thomas Frost, Arnab Hazari, and Pallab Bhattacharya, “Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot,” Applied Physics Letters, 105, no. 14, 2014.
  17. 17.Thomas Frost, Shafat Jahangir, Ethan Stark, Saniya Deshpande, Arnab Hazari, Chao Zhao, Boon S. Ooi, and Pallab Bhattacharya, “Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon,” Nano Letters, 14, no. 8, pp. 4535–4541, 2014.
  18. 18.Pallab Bhattacharya, Thomas Frost, Saniya Deshpande, M. Z. Baten, Arnab Hazari, and Ayan Das, “Room temperature electrically injected polariton laser,” Physical Review Letters, 112 (23), 236802, 2014.
  19. 19.Arnab Hazari, Simita Kundu, and Abhijit Chandra, “Novel approach of designing spreading code using genetic algorithm,” WSEAS Transactions on Communications, 13, pp. 130–142, 2014.

Conference Publications

  1. 1.Arnab Hazari, Fu Chen Hsiao, Lifan Yan, Junseok Heo, Joanna M. Millunchick, John Dallesasse, and Pallab Bhattacharya, “1.3 μm InN/InGaN/GaN Nanowire Array Diode Lasers and Photodiodes on (001) Silicon,” EMC 2017, Notre Dame, IN, 2017.
  2. 2.Arnab Hazari, Junseok Heo, and Pallab Bhattacharya, “III-nitride nanowire array based 1.3 μm monolithic photonic integrated circuit on (001) silicon substrate,” CLEO: Applications and Technology, pp. AM4A-5, Optica Publishing Group, 2017.
  3. 3.Arnab Hazari, Md Zunaid Baten, and Pallab Bhattacharya, “Monolithic III-nitride nanowire detectors on silicon,” 2016 IEEE Photonics Conference (IPC), pp. 232–233, IEEE, 2016.
  4. 4.Arnab Hazari and Pallab Bhattacharya, “III-nitride nanowire array edge-emitting 1.3 μm diode laser on (001) silicon substrate,” 2016 IEEE Photonics Conference (IPC), pp. 313–314, IEEE, 2016.
  5. 5.Arnab Hazari, Aniruddha Bhattacharya, Thomas Frost, and Pallab Bhattacharya, “0.5–1.3 µm III-nitride lasers and light emitting diodes epitaxially grown on (001) silicon,” 2015 IEEE Photonics Conference (IPC), pp. 563–564, IEEE, 2015.
  6. 6.Fu-Chen Hsiao, Arnab Hazari, Pallab Bhattacharya, Yia-Chung Chang, and John M. Dallesasse, “Modeling photocurrent spectra of high-indium-content InN/InGaN disk-in-wire photodiodes,” 2021 IEEE Photonics Conference (IPC), pp. 1–2, IEEE, 2021.
  7. 7.Pallab Bhattacharya, Arnab Hazari, and Shafat Jahangir, “III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600–1300 nm range,” Novel In-Plane Semiconductor Lasers XVII, vol. 10553, p. 1055302, SPIE, 2018.
  8. 8.Pallab Bhattacharya and Arnab Hazari, “1.3 μm III-nitride nanowire monolithic diode lasers and photonic integrated circuits on (001) silicon,” 2017 IEEE Photonics Conference (IPC), pp. 47–48, IEEE, 2017.
  9. 9.Pallab Bhattacharya, Arnab Hazari, and Shafat Jahangir, “InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon,” Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, vol. 10124, pp. 39–46, SPIE, 2017.
  10. 10.Thomas Frost, Arnab Hazari, and Pallab Bhattacharya, “High performance InGaN/(In)GaN quantum dot (λ= 630 nm) lasers,” 2015 IEEE Photonics Conference (IPC), pp. 583–584, IEEE, 2015.
  11. 11.Pallab Bhattacharya, Thomas Frost, and Arnab Hazari, “InGaN/GaN Quantum Dot Lasers: The Next Frontier,” The European Conference on Lasers and Electro-Optics, p. CB_9_1, Optica Publishing Group, 2015.
  12. 12.Ethan Stark, Thomas Frost, Shafat Jahangir, Arnab Hazari, Saniya Deshpande, and Pallab Bhattacharya, “A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon,” Novel In-Plane Semiconductor Lasers XIV, vol. 9382, pp. 102–110, SPIE, 2015.
  13. 13.Pallab Bhattacharya, Saniya Deshpande, Thomas Frost, and Arnab Hazari, “III-Nitride high temperature single-photon sources,” Novel In-Plane Semiconductor Lasers XIV, vol. 9382, pp. 16–27, SPIE, 2015.
  14. 14.Saniya Deshpande, Thomas Frost, Arnab Hazari, and Pallab Bhattacharya, “Room temperature electrically injected In0.4Ga0.6N/GaN quantum-dot visible (λ= 620 nm) single photon source,” 2014 IEEE Photonics Conference, pp. 548–549, IEEE, 2014.
  15. 15.Md Zunaid Baten, Thomas Frost, Saniya Deshpande, Arnab Hazari, Ayan Das, and Pallab Bhattacharya, “Room temperature strong coupling effects and polariton lasing under electrical injection,” 2014 IEEE Photonics Conference, pp. 451–452, IEEE, 2014.
  16. 16.Arnab Hazari, Simita Kundu, and Abhijit Chandra, “Performance evaluation of a new semi-orthogonal spreading code in an AWGN channel,” 2012 5th International Conference on Computers and Devices for Communication (CODEC), pp. 1–4, IEEE, 2012.
  17. 17.Arnab Hazari, Simita Kundu, and Abhijit Chandra, “Semi-orthogonal modified large-set Kasami sequence for CDMA system,” Proceedings IEEE Students' Conference on Electrical, Electronics and Computer Science, pp. 194–197, 2012.